Samsung begins mass production of 12nm DDR5 DRAM

According to Devdiscourse , the company's new DRAM will target artificial intelligence applications with higher performance. Samsung said that the latest 12nm DDR5 DRAM offers significant advantages over the previous generation such as reducing power consumption by up to 23% and increasing wafer yield by up to 20%, making it the perfect choice for global IT companies looking to minimize energy use and reduce carbon emissions for their servers and data centers.

12nm DDR5 DRAM promises to bring outstanding benefits

The development of 12nm technology is made possible by the use of new materials that increase cell capacitance, resulting in significant voltage differences in data signals and making it easier to accurately distinguish them. In addition, the company's efforts to reduce noise and operating voltage provide an ideal solution for server customers.

Samsung DRAM product executive vice president Jooyoung Lee said the new DRAM reflects the company's continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market needs for large-scale processing, but also by commercializing next-generation solutions that support higher yields.

Samsung's 12nm DDR5 DRAM line offers an impressive peak speed of 7.2 Gbps, allowing a 30 GB UHD movie to be processed in just 1 second. This exceptional speed makes it suitable for a wide range of applications, including data centers, artificial intelligence, and next-generation computing.

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