China successfully manufactures the world's fastest semiconductor memory

Chinese researchers have developed a flash memory using two-dimensional Dirac graphene with a completely new mechanism, breaking the speed limit of static electric memory information storage and access.

A Chinese research team has successfully created a breakthrough flash memory device called PoX, capable of storing data at a speed of 1 bit in 400 picoseconds.

It is the fastest semiconductor storage device ever announced.

The device's non-volatile memory outperforms today's fastest volatile memory technology, which takes about 1 to 10 nanoseconds to store a bit of data. A picosecond is about one thousandth of a nanosecond, or one trillionth of a second.

Volatile memory types such as SRAM or DRAM lose data when power is lost, making them unsuitable for low-power systems.

In contrast, non-volatile memory types such as flash (a type of memory that does not require a power source to maintain data with fast read/write speeds), although energy-efficient, do not meet the high-speed access requirements of artificial intelligence (AI).

Researchers at Fudan University have developed a flash memory using two-dimensional Dirac graphene with a completely new mechanism, breaking the speed limit of static electric memory information storage and access. The research results were published in the journal Nature on April 16.

According to the magazine's experts, this is a completely new and groundbreaking research project that is enough to shape the potential future for the generation of high-speed flash memory.

Fudan University research team leader Zhou Peng said that by using AI algorithms to optimize the experimental conditions of the process, the team has developed breakthrough technology and opened up prospects for future applications./.

(Vietnam+)

Source: https://www.vietnamplus.vn/trung-quoc-che-tao-thanh-cong-bo-nho-ban-dan-nhanh-nhat-the-gioi-post1033465.vnp